Impact of 1 MeV proton irradiation on InGaAsN solar cells
نویسندگان
چکیده
Abstract The impact of 1 MeV proton irradiation on 1.12 eV bandgap InGaAsN solar cells was studied through device and material characterizations. After a 10 13 p + cm −2 fluence, the photocurrent decreases by 28%, due to formation defects in both GaAs emitter absorber. Furthermore, photoluminescence measurements suggest that radiation hardness increases with nitrogen.
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2022
ISSN: ['0268-1242', '1361-6641']
DOI: https://doi.org/10.1088/1361-6641/ac637d